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HD1760JL
High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display
PRELIMINARY DATA
Features
STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION 1 TO-264 2 3
Applications
HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH -END MONITORS
Description
The device uses a Diffused Collector in Planar technology which adopts "Enhanced High Voltage Structure" (EHVS1) that was developed to fit High-Definition CRT displays. The new HD product series features improved silicon efficiency, bringing updated performance to Horizontal Deflection output stages.
Internal Schematic Diagram
Order codes
Part Number HD1760JL
Marking HD1760JL
Package TO-264
Packing TUBE
November 2005
rev.2 1/8
www.st.com 8
1 Electrical ratings
HD1760JL
1
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ
Electrical ratings
Absolute Maximum Rating
Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitte-Base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25C Storage Temperature Max. Operating Junction Temperature Value 1700 800 10 36 54 18 27 200 -65 to 150 150 Unit V V V A A A A W C C
Table 2.
Symbol RthJC
Thermal Data
Parameter Thermal Resistance Junction-Case____________________Max Value 0.625 Unit C/W
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HD1760JL
2 Electrical Characteristics
2
Electrical Characteristics
(TCASE = 25C; unless otherwise specified)
Table 3.
Symbol ICES IEBO
Electrical Characteristics
Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (IC = 0) Test Conditions VCE = 1700V VCE = 1700V___ VEB = 5V IC = 10mA IE = 10mA IC = 18A _____ IC = 18A _____ IC = 2A _____ VCE = 5V IC = 18A ____ VCE = 5V IC = 12A ____ _ __ IB(on) = 1A ___ _ LBB(on) = 0.8H IC = 8A ____ _ __ fh = 100kHz 2 110 s ns IB(on) = 1.3A ___ _ _IB(off) = -5.8A VCE(fly) = 1300V __VBE(off) = -2.7V LBB(on) = 0.25H fh = 32 KHz _IB(off) = -6.9A 2.6 300 s ns 5 IB = 4.5A IB = 4.5A 30 8.5 800 10 2 1.5 _TC = 125C Min. Typ. Max. 0.2 2 10 Unit mA mA A V V V V
VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VEBO VCE(sat) Note: 1 VBE(sat) Note: 1 hFE Emitter-Base Voltage (IC = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time
ts tf
VCE(fly) = 1340V __VBE(off) = -2.7V
ts tf
INDUCTIVE LOAD Storage Time Fall Time
Note: 1 Pulsed duration = 300 s, duty cycle 1.5%.
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3 Test circuit
HD1760JL
3
Figure 1.
Test circuit
Power Losses and Inductive Load Switching Test Circuit
Figure 2.
Reverse Biased Safe Operating Area Test Circuit
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HD1760JL
4 Package Mechanical Data
4
Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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4 Package Mechanical Data
HD1760JL
Table 4.
TO-264 Mechanical Data
Figure 3.
TO-264 Drawing
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HD1760JL
5 Revision History
5
Revision History
Date 17-Oct-2005 03-Nov-2005 Revision 1 2 Initial release. hFE value has been changed on Table 3 Changes
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5 Revision History
HD1760JL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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